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Investigation of High-Frequency Fine Structure in the Current Output of Shaped Contact Planar Gunn Diodes

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dc.contributor.authorDunn, Geoffrey
dc.contributor.authorMindil, Ahmed Mohammed H.
dc.contributor.authorKhalid, A.
dc.contributor.authorOxley, Chris
dc.contributor.institutionUniversity of Aberdeen.Physicsen
dc.contributor.institutionUniversity of Aberdeen.Natural & Computing Sciencesen
dc.date.accessioned2020-05-11T16:05:00Z
dc.date.available2020-05-11T16:05:00Z
dc.date.issued2020-05
dc.description.statusPeer revieweden
dc.format.extent5
dc.format.extent501616
dc.identifier162525919
dc.identifier62192193-6aa0-4586-b6f4-ed28538db97b
dc.identifier85083977535
dc.identifier000538156600006
dc.identifier.citationDunn, G, Mindil, A M H, Khalid, A & Oxley, C 2020, 'Investigation of High-Frequency Fine Structure in the Current Output of Shaped Contact Planar Gunn Diodes', IEEE Transactions on Electron Devices, vol. 67, no. 5, 9061165, pp. 1946-1951. https://doi.org/10.1109/TED.2020.2981191en
dc.identifier.doi10.1109/TED.2020.2981191
dc.identifier.iss5en
dc.identifier.issn0018-9383
dc.identifier.urihttps://hdl.handle.net/2164/14302
dc.identifier.urlhttp://www.scopus.com/inward/record.url?scp=85083977535&partnerID=8YFLogxKen
dc.identifier.vol67en
dc.language.isoeng
dc.relation.ispartofIEEE Transactions on Electron Devicesen
dc.subjectGallium arsenide (GaAs)en
dc.subjecthigh frequencyen
dc.subjectMonte Carloen
dc.subjectmultiple peaksen
dc.subjectplanar Gunn diodeen
dc.subjectCHANNELen
dc.subjectTRANSFERRED ELECTRON DEVICESen
dc.subjectSIMULATIONen
dc.subjectGAASen
dc.subjectTA Engineering (General). Civil engineering (General)en
dc.subjectElectronic, Optical and Magnetic Materialsen
dc.subjectElectrical and Electronic Engineeringen
dc.subject.lccTAen
dc.titleInvestigation of High-Frequency Fine Structure in the Current Output of Shaped Contact Planar Gunn Diodesen
dc.typeJournal articleen

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