Comparative Study of Heterosturcture Barrier Diodes in the GaAs/AlGaAs System
| dc.contributor.author | Akura, Mise | |
| dc.contributor.author | Dunn, Geoffrey | |
| dc.contributor.author | Missous, Mohammed | |
| dc.contributor.institution | University of Aberdeen.Engineering | en |
| dc.contributor.institution | University of Aberdeen.Physics | en |
| dc.date.accessioned | 2018-12-12T16:00:08Z | |
| dc.date.available | 2018-12-12T16:00:08Z | |
| dc.date.issued | 2018-09-18 | |
| dc.description.status | Peer reviewed | en |
| dc.format.extent | 6 | |
| dc.format.extent | 2227163 | |
| dc.identifier | 141027283 | |
| dc.identifier | b19c9604-5d1c-439b-a230-06c8c12e41b5 | |
| dc.identifier.citation | Akura, M, Dunn, G & Missous, M 2018, 'Comparative Study of Heterosturcture Barrier Diodes in the GaAs/AlGaAs System', International Journal of Materials Science and Applications, vol. 7, no. 4, pp. 161-166. https://doi.org/10.11648/j.ijmsa.20180704.17 | en |
| dc.identifier.doi | 10.11648/j.ijmsa.20180704.17 | |
| dc.identifier.iss | 4 | en |
| dc.identifier.issn | 2327-2635 | |
| dc.identifier.uri | http://hdl.handle.net/2164/11629 | |
| dc.identifier.url | http://www.sciencepublishinggroup.com/journal/paperinfo?journalid=123&doi=10.11648/j.ijmsa.20180704.17 | en |
| dc.identifier.vol | 7 | en |
| dc.language.iso | eng | |
| dc.relation.ispartof | International Journal of Materials Science and Applications | en |
| dc.subject | Monte Carlo | en |
| dc.subject | drift-diffusion | en |
| dc.subject | potential well | en |
| dc.subject | curvature coefficient | en |
| dc.subject | turn-on voltage | en |
| dc.subject | TK Electrical engineering. Electronics Nuclear engineering | en |
| dc.subject.lcc | TK | en |
| dc.title | Comparative Study of Heterosturcture Barrier Diodes in the GaAs/AlGaAs System | en |
| dc.type | Journal article | en |